powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 1 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information 60v +175c n - channel enhancement mode mosfet powerdi ? product summary b v dss r ds(on) max i d t c = + 25c (note 10 ) 60 v 5 .5 m? @ v gs = 10 v 100a description and applications this mosfet is designed to meet the stringent requirements of a utomotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? high f requency s witching ? sync. r ectification ? dcdc converters features ? rated to + 175 ? c C i deal for h igh a mbient t emperature e nvironments ? 1 00% unclamped inductive switching C ensures more reli able and robust end application ? low r ds ( on ) C minimizes power losses ? low q g C minimizes switching losses ? lead - free finish ; rohs c ompliant (notes 1 & 2) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di ? 5060 - 8 ? case material: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin annealed over copper leadframe. solderable per mil - std - 202, method 208 ? weight: 0.097 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h 6 00 5 l ps q - 13 p ower di ? 5060 - 8 2 , 500 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "gre en" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. for mo re information, please refer to http://www.diodes.com/ product_ compliance _definitions . html . 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic p ower di ? 5060 - 8 pin1 s d d g d d s s s d s s g d d d h6005ls yy ww = manufacturers marking green
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 2 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 6 0 v gate - source voltage v gss 20 v continuous drain current (note 6 ) t a = + 25 ? a = + 70 ? d 20.6 17.2 a continuous drain current (note 7 ) t c = + 25 ? d 100 a t c = + 100 ? s 100 a pulsed drain current ( 10 ? dm a avalanche current , l= 1 mh i a s 14.8 a avalanche energy , l= 1 mh e a s 98 mj thermal characteristics characteristic symbol value units total power dissipation (note 6 ) t a = + 25 ? d 3.2 w thermal resistance, junction to ambient (note 6 ) r ja 4 7 c/w total power dissipation (note 7 ) t c = + 25 ? d 1 50 w thermal resistance, junction to case (note 7 ) r j c 1 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 6 0 - - v v gs = 0v, i d = 1m a zero gate voltage drain current i dss - - 1 ds = 48 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 20 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 1 - 3 v v ds = v gs , i d = 250 a ds (on) - 4.4 5 .5 m ? gs = 10 v, i d = 50 a - 5.7 7 .2 v gs = 6 v, i d = 20 a - 7.7 10 v gs = 4.5 v, i d = 12.5 a diode forward voltage v sd - 0.9 - v v gs = 0v, i s = 50 a dynamic characteristics (note 9 ) input capacitance c iss - 2962 - pf v ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss - 965.2 - reverse transfer capacitance c rss - 59.8 - gate r esistance r g - 0.66 - ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 10v ) q g - 47.1 - nc v d d = 30 v, i d = 50 a total gate charge ( v gs = 4.5 v ) q g - 23.1 - gate - source charge q gs - 10.2 - gate - drain charge q gd - 12.5 - turn - on delay time t d( on ) - 8.3 - n s v dd = 30 v, v gs = 10 v, i d = 30 a , r g = 3.3 r - 9.4 - turn - off delay time t d( off ) - 22 - turn - off fall time t f - 8.9 - body diode reverse recovery time t rr - 40.4 - n s i f = 30 a, di/dt = 1 0 0a/s rr - 49.7 - n c notes: 6 . device mounted on fr - 4 substrate pc b oard, 2oz copper, with thermal b ias to bottom layer 1inch square copper plate . 7 . thermal resistance from junction to soldering point (on the exposed drain pad). 8 . short duration pulse test used to minimize self - heating effe ct. 9 . guaranteed by design. not subject to product testing. 10 . package limited.
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 3 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information 0.0 10.0 20.0 30.0 40.0 50.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs = 3.0v v gs = 4.0v v gs = 5.0v v gs = 4.5v v gs = 3.5v v gs = 6.0v v gs = 10.0v 0 5 10 15 20 25 30 1 2 3 4 5 6 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic - 55 o c 25 o c 85 o c 150 o c 125 o c v ds = 5v 175 o c 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 0 5 10 15 20 25 30 35 40 45 50 r ds(on) , drain - source on - resistance ( d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 6.0v v gs = 10v v gs = 4.5v 0 0.01 0.02 0.03 0.04 0.05 0.06 0 4 8 12 16 20 r ds(on) , drain - source on - resistance ( gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 50a i d = 20a i d = 12.5a 0 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.01 10 20 30 40 50 60 70 80 90 100 r ds(on) , drain - source on - resistance ( d , drain current (a) figure 5. typical on - resistance vs. drain current and junction temperature v gs = 10v 150 o c 125 o c - 55 o c 25 o c 85 o c 175 o c 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = 10v, i d = 50a v gs = 4.5v, i d = 12.5a
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 4 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 - 50 - 25 0 25 50 75 100 125 150 175 r ds(on) , drain - source on - resistance ( j , junction temperature ( gs = 4.5v, i d = 12.5a v gs = 10v, i d = 50a 0 0.5 1 1.5 2 2.5 3 3.5 4 - 50 - 25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma 0 10 20 30 40 50 60 70 80 90 100 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t j = 125 o c t j = 175 o c t j = 85 o c t j = 25 o c t j = - 55 o c v gs = 0v t j = 150 o c 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c rss c oss c iss 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 v gs (v) q g (nc) figure 11. gate charge v ds = 30v, i d = 50a 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area p w =10 s p w =1s p w =100ms p w =10ms p w =100 s p w =1 s r ds(on) limited t j(max) = 175 c = 25 gs =10v p w =1ms
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 5 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r jc (t) = r(t) * r jc r jc = 1
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 6 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi ? 5060 - 8 powerdi ? 5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 - b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 - - l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm suggested pad layout please see ap0200 1 at http://www.diodes.com/datasheets/ap0200 1 .pdf for the latest version. powerdi ? 5060 - 8 dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x 3 4.420 x 4 5.610 y 1.270 y1 0.600 y2 1. 020 y3 0.295 y 4 1. 825 y5 3.810 y6 0.180 y7 6.610 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3
powerdi is a registered tr ademark of diodes incorporated. dm th6005l ps q document number: ds 38359 rev. 1 - 2 7 of 7 www.diodes.com november 2015 ? diodes incorporated dm th6005l ps q advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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